Process development and comparison of various boron emitter technologies for high‐efficiency (~21%) n‐type silicon solar cells | Zendy

Ryu Kyungsun | Zendy; Cho Eunhwan | Zendy; Rohatgi Ajeet | Zendy; Ok YoungWoo | Zendy

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Process development and comparison of various boron emitter technologies for high‐efficiency (~21%) n‐type silicon solar cells

Author(s) -

Ryu Kyungsun,

Cho Eunhwan,

Rohatgi Ajeet,

Ok YoungWoo

Publication year - 2016

Publication title -

progress in photovoltaics: research and applications

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.286

H-Index - 131

eISSN - 1099-159X

pISSN - 1062-7995

DOI - 10.1002/pip.2775

Subject(s) - common emitter , materials science , chemical vapor deposition , optoelectronics , boron , busbar , sheet resistance , evaporation , solar cell , silicon , coating , dielectric , nanotechnology , electrical engineering , chemistry , layer (electronics) , engineering , physics , organic chemistry , thermodynamics

This paper shows for the first time a comparison of commercial‐ready n‐type passivated emitter , rear totally diffused solar cells with boron (B) emitters formed by spin‐on coating, screen printing, ion implantation, and atmospheric pressure chemical vapor deposition. All the B emitter technologies show nearly same efficiency of ~20%. The optimum front grid design (5 busbars and 100 gridlines), calculated by an analytical modeling, raised the baseline cell efficiency up to 20.5% because of reduced series resistance. Along with the five busbars, rear point contacts formed by laser ablation of dielectric and physical vapor deposition Al metallization resulted in another 0.4% improvement in efficiency. As a result, 20.9% efficient n‐type passivated emitter, rear totally diffused cell was achieved in this paper. Copyright © 2016 John Wiley & Sons, Ltd.

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