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Progress on large area n‐type silicon solar cells with front laser doping and a rear emitter
Author(s) -
Urueña Angel,
Aleman Monica,
Cornagliotti Emanuele,
Sharma Aashish,
Haslinger Michael,
Tous Loic,
Russell Richard,
John Joachim,
Duerinckx Filip,
Szlufcik Jozef
Publication year - 2016
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2767
Subject(s) - common emitter , passivation , doping , annealing (glass) , optoelectronics , materials science , silicon , laser , monocrystalline silicon , crystalline silicon , nanotechnology , optics , layer (electronics) , metallurgy , physics
We report on the progress of imec's n‐type passivated emitter, rear totally diffused rear junction silicon solar cells. Selective laser doping has been introduced in the flow, allowing the implementation of a shallow diffused front surface field and a reduction of the recombination current in the contact area. Simplifications have been implemented towards a more industrial annealing sequence, by replacing expensive forming gas annealing steps with a belt furnace annealing. By applying these improvements, together with an advanced texturing process and emitter passivation by atomic layer deposition of Al 2 O 3 , 22.5% efficient cells (three busbars) have been realized on commercial 156 · 156 mm 2 Czochralski‐Si. This result has been independently confirmed by ISE CalLab. Copyright © 2016 John Wiley & Sons, Ltd.