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Electronic structure of the Zn(O,S)/Cu(In,Ga)Se 2 thin‐film solar cell interface
Author(s) -
Mezher Michelle,
Garris Rebekah,
Mansfield Lorelle M.,
Horsley Kimberly,
Weinhardt Lothar,
Duncan Douglas A.,
Blum Monika,
Rosenberg Samantha G.,
Bär Marcus,
Ramanathan Kannan,
Heske Clemens
Publication year - 2016
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2764
Subject(s) - x ray photoelectron spectroscopy , conduction band , chalcopyrite , thin film solar cell , solar cell , materials science , thin film , photoemission spectroscopy , electronic structure , spectroscopy , band offset , zinc , optoelectronics , analytical chemistry (journal) , electron , band gap , chemistry , copper , valence band , condensed matter physics , nanotechnology , nuclear magnetic resonance , physics , metallurgy , quantum mechanics , chromatography
The electronic band alignment of the Zn(O,S)/Cu(In,Ga)Se 2 interface in high‐efficiency thin‐film solar cells was derived using X‐ray photoelectron spectroscopy, ultra‐violet photoelectron spectroscopy, and inverse photoemission spectroscopy. Similar to the CdS/Cu(In,Ga)Se 2 system, we find an essentially flat (small‐spike) conduction band alignment (here: a conduction band offset of (0.09 ± 0.20) eV), allowing for largely unimpeded electron transfer and forming a likely basis for the success of high‐efficiency Zn(O,S)‐based chalcopyrite devices. Furthermore, we find evidence for multiple bonding environments of Zn and O in the Zn(O,S) film, including ZnO, ZnS, Zn(OH) 2 , and possibly ZnSe. Copyright © 2016 John Wiley & Sons, Ltd.
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