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High efficiency UMG silicon solar cells: impact of compensation on cell parameters
Author(s) -
Rougieux Fiacre,
Samundsett Christian,
Fong Kean Chern,
Fell Andreas,
Zheng Peiting,
Macdonald Daniel,
Degoulange Julien,
Einhaus Roland,
Forster Maxime
Publication year - 2016
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2729
Subject(s) - ingot , materials science , wafer , silicon , common emitter , solar cell , carrier lifetime , optoelectronics , energy conversion efficiency , dopant , boron , compensation (psychology) , engineering physics , doping , composite material , engineering , chemistry , organic chemistry , alloy , psychology , psychoanalysis
High efficiency solar cells have been fabricated with wafers from an n‐type Czochralski grown (Cz) ingot using 100% Upgraded Metallurgical‐Grade (UMG) silicon feedstock. The UMG cells fabricated with a passivated emitter and rear totally diffused (PERT) structure have an independently confirmed cell efficiency of 19.8%. This is the highest efficiency reported for a cell based on 100% UMG silicon at the time of publication. The current and power losses are analysed as a function of measured material parameters, including carrier mobility, lifetime and the presence of the boron–oxygen defect. Dopant compensation is shown to reduce both the minority carrier lifetime and mobility, which significantly affects both the current and voltage of the device. Copyright © 2015 John Wiley & Sons, Ltd.