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Growth of 1‐eV GaNAsSb‐based photovoltaic cell on silicon substrate at different As/Ga beam equivalent pressure ratios
Author(s) -
Leong Nelvin,
Tan Kian Hua,
Loke Wan Khai,
Wicaksono Satrio,
Li Daosheng,
Yoon Soon Fatt,
Sharma Prithu,
Milakovich Tim,
Bulsara Mayank,
Fitzgerald Gene
Publication year - 2016
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2705
Subject(s) - molecular beam epitaxy , band gap , substrate (aquarium) , voltage , analytical chemistry (journal) , energy conversion efficiency , open circuit voltage , solar cell , photovoltaic system , silicon , materials science , chemistry , optoelectronics , epitaxy , physics , electrical engineering , nanotechnology , oceanography , engineering , layer (electronics) , chromatography , geology , quantum mechanics
We report the performance of 1‐eV GaNAsSb‐based photovoltaic samples grown on a Si substrate using molecular beam epitaxy at different As/Ga beam equivalent pressure (BEP) ratios. The light current–voltage curve and spectral response of the samples were measured. The sample grown at an As/Ga BEP ratio of 10 showed the highest energy conversion efficiency with an open circuit voltage ( V OC ) of 0.529 V and a short circuit current density of 17.0 mA/cm 2 . This measured V OC is the highest ever reported value in GaNAsSb 1‐eV photovoltaic cell, resulting in the lowest ever reported E g /q‐V OC of 0.50 eV. The increase in the As/Ga BEP ratio also resulted in an increase in the bandgap‐voltage offset value ( E g /q‐V OC ) and a decrease in quantum efficiency up to As/Ga BEP ratio of 18. Copyright © 2015 John Wiley & Sons, Ltd.