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A comparative study of Cd‐ and Zn‐compound buffer layers on Cu(In 1− x ,Ga x )(S y ,Se 1− y ) 2 thin film solar cells
Author(s) -
Kobayashi Taizo,
Jehl Li Kao Zacharie,
Kato Takuya,
Sugimoto Hiroki,
Nakada Tokio
Publication year - 2016
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2695
Subject(s) - solar cell , open circuit voltage , chemistry , band gap , analytical chemistry (journal) , nuclear chemistry , materials science , optoelectronics , voltage , physics , chromatography , quantum mechanics
This paper reports a comparative study of Cu(In,Ga)(S,Se) 2 (CIGSSe) thin‐film solar cells with CBD‐CdS, CBD‐ZnS(O,OH) and ALD‐Zn(O,S) buffer layers. Each buffer layer was deposited on CIGSSe absorber layers which were prepared by sulfurization after selenization (SAS) process by Solar Frontier K. K. Cell efficiencies of CBD‐CdS/CIGSSe, CBD‐ZnS(O,OH)/CIGSSe and ALD‐Zn(O,S)/CIGSSe solar cells exceeded 18%, for a cell area of 0.5 cm 2 . The solar cells underwent a heat‐light soaking (HLS) post‐treatment at 170 °C under one‐sun illumination in the air; among the three condtions, the ALD‐Zn(O,S)/CIGSSe solar cells showed the highest cell efficiency of 19.78% with the highest open‐circuit voltage of 0.718 V. Admittance spectroscopy measurements showed a shift of the N 1 defect's energy position toward shallower energy positions for ALD‐Zn(O,S)/CIGSSe solar cells after HLS post‐treatment, which is in good agreement with their higher open‐circuit voltage and smaller interface recombination than that of CBD‐ZnS(O,OH)/CIGSSe solar cells. Copyright © 2015 John Wiley & Sons, Ltd.