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Achievement of 17.9% efficiency in 30 × 30 cm 2 Cu(In,Ga)(Se,S) 2 solar cell sub‐module by sulfurization after selenization with Cd‐free buffer
Author(s) -
Nam Junggyu,
Kang Yoonmook,
Lee Dongho,
Yang JungYup,
Kim YoungSu,
Mo Chan B.,
Park Sungchan,
Kim Dongseop
Publication year - 2016
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2653
Subject(s) - quantum efficiency , transmittance , materials science , solar cell , short circuit , open circuit voltage , layer (electronics) , analytical chemistry (journal) , optoelectronics , zinc , copper indium gallium selenide solar cells , oxide , doping , voltage , chemistry , electrical engineering , nanotechnology , metallurgy , engineering , chromatography
We have achieved 17.9% efficiency in a 30 × 30 cm 2 Cu(In,Ga)(Se,S) 2 solar cell sub‐module prepared by selenization and sulfurization processes with a Cd‐free buffer. The development of an absorber layer, transparent conducting oxide window layer, and module design was the key focus. This permitted 1.8% higher efficiency than our last experimental result. The quantity and the injection time of the sodium were controlled, resulting in higher open circuit voltage (V oc ) and short circuit current (J sc ). In order to increase J sc , we changed the thickness of the window layer. Boron‐doped zinc oxide was optimized for higher transmittance without reducing the fill factor. The uniformity of each layer was improved, and patterns were optimized for each module. Therefore, V oc , J sc , and FF could be theoretically improved on the reported results of, respectively, 20 mV, 2 mA/cm 2 , and 1.4%. The module's efficiency was measured at the Korea Test Laboratory to compare with the data obtained in‐house. Various analyses were performed, including secondary ion mass spectroscopy, photoluminescence, quantum efficiency, solar simulator, and UV–vis spectrometry, to measure the cell's depth profile, carrier lifetime, external quantum efficiency, module efficiency, and transmittance, respectively. Copyright © 2015 John Wiley & Sons, Ltd.