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Above 16% efficient sequentially grown Cu(In,Ga)(Se,S) 2 ‐based solar cells with atomic layer deposited Zn(O,S) buffers
Author(s) -
Merdes Saoussen,
Ziem Florian,
Lavrenko Tetiana,
Walter Thomas,
Lauermann Iver,
Klingsporn Max,
Schmidt Sebastian,
Hergert Frank,
Schlatmann Rutger
Publication year - 2015
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2579
Subject(s) - atomic layer deposition , open circuit voltage , chalcopyrite , layer (electronics) , deposition (geology) , materials science , solar cell , analytical chemistry (journal) , voltage , optoelectronics , chemistry , nanotechnology , copper , metallurgy , electrical engineering , environmental chemistry , paleontology , engineering , sediment , biology
We report the development of Cd‐free buffers by atomic layer deposition for chalcopyrite‐based solar cells. Zn(O,S) buffer layers were prepared by atomic layer deposition on sequentially grown Cu(In,Ga)(Se,S) 2 absorbers from Bosch Solar CISTech GmbH. An externally certified efficiency of 16.1% together with an open circuit voltage of 612 mV were achieved on laboratory scale devices. Stability tests show that the behavior of the ALD‐Zn(O,S)‐buffered devices can be characterized as stable only showing a minor drift of the open circuit voltage and the fill factor. Copyright © 2015 John Wiley & Sons, Ltd.