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Cross‐sectional mapping of hole concentrations as a function of copper treatment in CdTe photo‐voltaic devices
Author(s) -
Korevaar Bas A.,
Zorn Gilad,
Raghavan Kamala C.,
Cournoyer James R.,
Dovidenko Katharine
Publication year - 2015
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2576
Subject(s) - van der pauw method , cadmium telluride photovoltaics , copper , charge carrier density , capacitance , materials science , hall effect , current density , analytical chemistry (journal) , optoelectronics , chemistry , electrical resistivity and conductivity , electrical engineering , physics , doping , electrode , metallurgy , chromatography , quantum mechanics , engineering
The carrier density and carrier density distribution within CdTe solar cells were studied with scanning capacitance microscopy (SCM). The CdTe solar cells were studied after every process step and as a function of varying copper treatment conditions. It was found that the CdTe film is practically undoped after deposition and after CdCl 2 treatment, while after the copper step the carrier density distribution is non‐uniform with a mixture of p ‐type and intrinsic grains in the CdTe film. These SCM observations were also confirmed with device performance data as well as capacitance–voltage measurements and Van der Pauw Hall measurements. Copyright © 2014 John Wiley & Sons, Ltd.