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Impacts of surface sulfurization on Cu(In 1−x ,Ga x )Se 2 thin‐film solar cells
Author(s) -
Kobayashi Taizo,
Yamaguchi Hiroshi,
Jehl Li Kao Zacharie,
Sugimoto Hiroki,
Kato Takuya,
Hakuma Hideki,
Nakada Tokio
Publication year - 2015
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2554
Subject(s) - copper indium gallium selenide solar cells , x ray photoelectron spectroscopy , thin film , materials science , analytical chemistry (journal) , thin film solar cell , solar cell , open circuit voltage , capacitance , voltage , optoelectronics , chemistry , chemical engineering , electrical engineering , nanotechnology , electrode , chromatography , engineering
In this work, the impacts of surface sulfurization of high‐quality Cu(In 1−x ,Ga x )Se 2 (CIGS) thin films deposited by three‐stage process on the film properties and the cell performance were investigated. The CIGS thin films were sulfurized at 550 °C for 30 min using H 2 S gas. The X‐ray photoelectron spectroscopy analysis revealed that sulfur atoms diffused into the CIGS surface layer and that the valence band minimum was lowered by the film sulfurization. The open circuit voltage ( V oc ) drastically increased from 0.590 to 0.674 V as a result of the sulfurization process. Temperature‐dependent current–voltage and capacitance–frequency measurements also revealed that interface recombination was drastically decreased by the lowering of the defect's activation energy level at the vicinity of the buffer/CIGS interface after the sulfurization. Copyright © 2014 John Wiley & Sons, Ltd.