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High efficiency large area n ‐type front junction silicon solar cells with boron emitter formed by screen printing technology
Author(s) -
Ryu Kyungsun,
Upadhyaya Ajay,
Upadhyaya Vijaykumar,
Rohatgi Ajeet,
Ok YoungWoo
Publication year - 2015
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2486
Subject(s) - common emitter , materials science , optoelectronics , screen printing , silicon , boron , open circuit voltage , annealing (glass) , silicon nitride , nanotechnology , stack (abstract data type) , electrical engineering , voltage , chemistry , composite material , engineering , organic chemistry , computer science , programming language
In this paper, we report on commercially viable screen printing (SP) technology to form boron emitters. A screen‐printed boron emitter and ion‐implanted phosphorus back surface field were formed simultaneously by a co‐annealing process. Front and back surfaces were passivated by chemically grown oxide capped with plasma‐enhanced chemical vapor deposition silicon nitride stack. Front and back contacts were formed by traditional SP and firing processes with silver/aluminum grid on front and local silver back contacts on the rear. This resulted in 19.6% efficient large area (239 cm 2 ) n ‐type solar cells with an open‐circuit voltage V oc of 645 mV, short‐circuit current density J sc of 38.6 mA/cm 2 , and fill factor of 78.6%. This demonstrates the potential of this novel technology for production of low‐cost high‐efficiency n ‐type silicon solar cells. Copyright © 2014 John Wiley & Sons, Ltd.