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Junction formation by Zn(O,S) sputtering yields CIGSe‐based cells with efficiencies exceeding 18%
Author(s) -
Klenk Reiner,
Steigert Alexander,
Rissom Thorsten,
Greiner Dieter,
Kaufmann Christian A.,
Unold Thomas,
LuxSteiner Martha Ch.
Publication year - 2014
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2445
Subject(s) - sputtering , annealing (glass) , layer (electronics) , materials science , chemical engineering , optoelectronics , thin film , nanotechnology , metallurgy , engineering
In an effort to reduce the complexity and associated production costs of Cu(In,Ga)Se 2 (CIGSe)‐based solar cells, the commonly used sputtered undoped ZnO layer has been modified to eliminate the requirement for a dedicated buffer layer. After replacing the ZnO target with a mixed ZnO/ZnS target, efficient solar cells could be prepared by sputtering directly onto the as‐grown CIGSe surface. This approach has now been tested with high‐quality lab‐scale glass/Mo/CIGSe substrates. An efficiency of 18.3% has been independently confirmed without any post‐deposition annealing or light soaking. Copyright © 2013 John Wiley & Sons, Ltd.