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Combinatorial study of NaF addition in CIGSe films for high efficiency solar cells
Author(s) -
Eid Jessica,
Liang Haifan,
Gereige Issam,
Lee Sang,
Duren Jeroen Van
Publication year - 2015
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2419
Subject(s) - open circuit voltage , materials science , scanning electron microscope , solar cell , fluoride , secondary ion mass spectrometry , thin film , grain size , sodium fluoride , ion , gallium , analytical chemistry (journal) , short circuit , nuclear chemistry , chemical engineering , optoelectronics , nanotechnology , voltage , chemistry , inorganic chemistry , metallurgy , electrical engineering , composite material , organic chemistry , chromatography , engineering
We report on a sodium fluoride (NaF) thickness variation study for the H 2 Se batch furnace selenization of sputtered Cu(In,Ga) films in a wide range of Cu(In,Ga) film compositions to form Cu(In,Ga)Se 2 (CIGSe) films and solar cells. Literature review indicates lack of consensus on the mechanisms involved in Na altering CIGSe film properties. In this work, for sputtered and batch‐selenized CIGSe, NaF addition results in reduced gallium content and an increase in grain size for the top portion of the CIGSe film, as observed by scanning electron microscopy and secondary ion mass spectrometry. The addition of up to 20 nm of NaF resulted in an improvement in all relevant device parameters: open‐circuit voltage, short‐circuit current, and fill factor. The best results were found for 15 nm NaF addition, resulting in solar cells with 16.0% active‐area efficiency (without anti‐reflective coating) at open‐circuit voltage ( V OC ) of 674 mV. Copyright © 2013 John Wiley & Sons, Ltd.