Effects of combined heat and light soaking on device performance of Cu(In,Ga)Se 2  solar cells with ZnS(O,OH) buffer layer | Zendy

Kobayashi Taizo | Zendy; Yamaguchi Hiroshi | Zendy; Nakada Tokio | Zendy

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Effects of combined heat and light soaking on device performance of Cu(In,Ga)Se 2 solar cells with ZnS(O,OH) buffer layer

Author(s) -

Kobayashi Taizo,

Yamaguchi Hiroshi,

Nakada Tokio

Publication year - 2014

Publication title -

progress in photovoltaics: research and applications

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.286

H-Index - 131

eISSN - 1099-159X

pISSN - 1062-7995

DOI - 10.1002/pip.2339

Subject(s) - copper indium gallium selenide solar cells , x ray photoelectron spectroscopy , annealing (glass) , solar cell , materials science , conduction band , thin film solar cell , analytical chemistry (journal) , optoelectronics , chemical engineering , chemistry , metallurgy , electron , physics , chromatography , quantum mechanics , engineering

The impacts of air annealing, light soaking (LS), and heat–light soaking (HLS) on cell performances were investigated for ZnS(O,OH)/Cu(In,Ga)Se 2 (CIGS) thin‐film solar cells. It was found that the HLS post‐treatment, a combination of LS and air annealing at 130 °C, is the most effective process for improving the cell performances of ZnS(O,OH)/CIGS devices. The best solar cell yielded a total area efficiency of 18.4% after the HLS post‐treatment. X‐ray photoelectron spectroscopy showed that the improved cell performance was attributable to the decreased S/(S + O) atomic ratio, not only in the surface region but also the interface region between the ZnS(O,OH) and CIGS layers, implying the shift to an adequate conduction‐band offset at the ZnS(O,OH)/CIGS interface. Copyright © 2013 John Wiley & Sons, Ltd.

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