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Laser‐doped solar cells exceeding 18% efficiency on large‐area commercial‐grade multicrystalline silicon substrates
Author(s) -
Li Tao,
Wang Wenjing,
Zhou Chunlan,
Song Yang,
Duan Ye,
Li Youzhong
Publication year - 2013
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2292
Subject(s) - materials science , doping , silicon , optoelectronics , laser , silicon solar cell , engineering physics , optics , engineering , physics
Large‐area multicrystalline silicon solar cells fabrication by laser doping is studied in this paper. The liquid dopant solution is sprayed onto the SiN x :H film to act as dopant source. Laser doping is performed to locally melt silicon substrates, and phosphorus dopant atoms are incorporated into the liquid silicon by liquid‐phase diffusion to form a selective emitter. Light‐induced plating is carried out for front side metallization. The influences of laser energy density and pulse overlap on electrical performance of large‐area multicrystalline silicon solar cells are obtained. The laser energy density and pulse overlap are optimized in consideration of sufficient built‐in voltage and small‐scale laser‐induced damage. The typical spectral response for large‐area multicrystalline silicon solar cells by laser doping is presented. The typical efficiency distribution for 1‐day production of the 10 MW production line shows the overall average efficiency above 18% on large‐area commercial‐grade multicrystalline silicon substrates for the 4 months of operation, confirming the potential for transferring high‐efficiency selective emitter silicon solar cells by laser doping into a production line. Copyright © 2012 John Wiley & Sons, Ltd.