Premium
Effect of window layer composition in Cd 1− x Zn x S/CdTe solar cells
Author(s) -
Kartopu Giray,
Clayton Andrew J.,
Brooks William S.M.,
Hodgson Simon D.,
Barrioz Vincent,
Maertens Alban,
Lamb Dan A.,
Irvine Stuart J.C.
Publication year - 2014
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2272
Subject(s) - cadmium telluride photovoltaics , photocurrent , layer (electronics) , solar cell , band gap , window (computing) , materials science , thin film , zinc , optoelectronics , analytical chemistry (journal) , chemistry , nanotechnology , metallurgy , chromatography , computer science , operating system
To improve CdS/CdTe cell/module efficiencies, CdS window layer thinning is commonly applied despite the risk of increased pin‐hole defects and shunting. An alternative approach is to widen the band gap of the window layer (2.42 eV for CdS) via alloying, for example, by forming compositions of Cd 1− x Zn x S. In this study, the performance of Cd 1− x Zn x S/CdTe thin‐film solar cells has been studied as a function of x (from x = 0 to 0.9), widening the window layer band gap up to and over 3.4 eV. Optimum Cd 1− x Zn x S compositions were clearly identified to be around x = 0.7, and limitations to the achievable photocurrent and conversion efficiencies have been addressed. Copyright © 2012 John Wiley & Sons, Ltd.