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ILGAR In 2 S 3 buffer layers for Cd‐free Cu(In,Ga)(S,Se) 2 solar cells with certified efficiencies above 16%
Author(s) -
SáezAraoz Rodrigo,
Krammer Johanna,
Harndt Susanna,
Koehler Tristan,
Krueger Martin,
Pistor Paul,
Jasenek Axel,
Hergert Frank,
LuxSteiner Martha Ch.,
Fischer ChristianHerbert
Publication year - 2012
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2268
Subject(s) - buffer (optical fiber) , chalcopyrite , layer (electronics) , deposition (geology) , solar cell , thin film solar cell , materials science , copper indium gallium selenide solar cells , analytical chemistry (journal) , thin film , optoelectronics , chemistry , copper , nanotechnology , metallurgy , electrical engineering , chromatography , paleontology , sediment , biology , engineering
In 2 S 3 buffer layers have been prepared using the spray ion layer gas reaction deposition technique for chalcopyrite‐based thin‐film solar cells. These buffers deposited on commercially available Cu(In,Ga)(S,Se) 2 absorbers have resulted in solar cells with certified record efficiencies of 16.1%, clearly higher than the corresponding CdS‐buffered references. The deposition process has been optimized, and the resulting cells have been studied using current–voltage and quantum efficiency analysis and compared with previous record cells, cells with a thermally evaporated In 2 S 3 buffer layer and CdS references. Copyright © 2012 John Wiley & Sons, Ltd.