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Temperature‐dependent Hall‐effect measurements of p‐type multicrystalline compensated solar grade silicon
Author(s) -
Modanese Chiara,
Acciarri Maurizio,
Binetti Simona,
Søiland AnneKarin,
Di Sabatino Marisa,
Arnberg Lars
Publication year - 2013
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2223
Subject(s) - materials science , hall effect , silicon , wafer , electron mobility , atmospheric temperature range , impurity , analytical chemistry (journal) , doping , electrical resistivity and conductivity , condensed matter physics , optoelectronics , chemistry , electrical engineering , thermodynamics , physics , organic chemistry , chromatography , engineering
In this study, we have investigated the Hall majority carrier mobility of p‐type, compensated multicrystalline solar grade silicon (SoG‐Si) wafers for solar cells in the temperature range 70–373 K. At low temperature (~70 K) the difference in the mobilities measured for the compensated and the uncompensated reference samples is the highest, and the measured mobility shows dependence on the compensation ratio. Mobilities decrease with increasing temperature, and towards room temperature, the mobilities of the different samples are in the same range. The measurements show that, for these samples, the contribution from lattice scattering is dominating over ionized impurity scattering at room temperature. In the range of interest for silicon solar cells (above room temperature), the trend in carrier mobility is similar for all the samples, and the measured value for the sample with low compensation ratio and low doping density is comparable to the uncompensated references. A comparison of resistivity and majority carrier density measured by the Hall setup at room temperature and by four‐point probe and glow discharge mass spectroscopy, respectively, is reported as well. Copyright © 2012 John Wiley & Sons, Ltd.