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Approach for Al 2 O 3 rear surface passivation of industrial p‐type Si PERC above 19%
Author(s) -
Vermang Bart,
Goverde Hans,
Tous Loic,
Lorenz Anne,
Choulat Patrick,
Horzel Jorg,
John Joachim,
Poortmans Jef,
Mertens Robert
Publication year - 2012
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2196
Subject(s) - passivation , stack (abstract data type) , materials science , common emitter , current density , atomic layer deposition , deposition (geology) , layer (electronics) , open circuit voltage , optoelectronics , analytical chemistry (journal) , electrical engineering , voltage , nanotechnology , chemistry , physics , paleontology , quantum mechanics , chromatography , sediment , computer science , biology , programming language , engineering
Atomic layer deposition (ALD) of thin Al 2 O 3 (≤10 nm) films is used to improve the rear surface passivation of large‐area screen‐printed p‐type Si passivated emitter and rear cells (PERC). A blister‐free stack of Al 2 O 3 /SiO x /SiN x is developed, leading to an improved back reflection and a rear recombination current ( J 0,rear ) of 92 ± 6 fA/cm 2 . The Al 2 O 3 /SiO x /SiN x stack is blister‐free if a 700°C anneal in N 2 is performed after the Al 2 O 3 deposition and prior to the SiO x /SiN x capping. A clear relationship between blistering density and lower open‐circuit voltage ( V OC ) due to increased rear contacting area is shown. In case of the blister‐free Al 2 O 3 /SiO x /SiN x rear surface passivation stack, an average cell efficiency of 19.0% is reached and independently confirmed by FhG‐ISE CalLab. Compared with SiO x /SiN x ‐passivated PERC, there is an obvious gain in V OC and short‐circuit current ( J SC ) of 5 mV and 0.2 mA/cm 2 , respectively, thanks to improved rear surface passivation and rear internal reflection. Copyright © 2012 John Wiley & Sons, Ltd.