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Phosphorus gettering of iron by screen‐printed emitters in monocrystalline Czochralski silicon wafers
Author(s) -
Pletzer Tobias M.,
Suckow Stephan,
Stegemann Elmar F. R.,
Windgassen Horst,
Bätzner Derk L.,
Kurz Heinrich
Publication year - 2013
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.2175
Subject(s) - monocrystalline silicon , wafer , getter , materials science , silicon , dopant , common emitter , boron , carrier lifetime , optoelectronics , doping , chemistry , organic chemistry
In this paper, we demonstrate single‐sided screen‐printed emitters in thin monocrystalline Czochralski silicon (Cz‐Si) wafers with an improved gettering of iron compared with conventional double‐sided POCl 3 emitters. The phosphorus dopant pastes used have to be chosen carefully to provide a sufficiently low emitter sheet resistance and to avoid iron contamination. The iron concentration is determined in a non‐destructive way from the minority carrier lifetime obtained by quasi‐steady‐state photoconductance measurements, down to levels not yet demonstrated for screen‐printed emitters. In addition, the well‐known metastable boron–oxygen complexes in Cz‐Si have been transferred into a stable state by light‐induced degradation prior to these measurements. Copyright © 2012 John Wiley & Sons, Ltd.

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