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The roles of shallow and deep levels in the recombination behavior of polycrystalline silicon on glass solar cells
Author(s) -
Wong Johnson,
Huang Jialiang,
Varlamov Sergey,
Green Martin A.,
Keevers Mark
Publication year - 2012
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.1154
Subject(s) - polycrystalline silicon , recombination , silicon , superposition principle , crystallite , impurity , materials science , dislocation , dopant , range (aeronautics) , grain boundary , engineering physics , optoelectronics , condensed matter physics , chemical physics , nanotechnology , chemistry , composite material , doping , physics , thin film transistor , metallurgy , microstructure , biochemistry , organic chemistry , layer (electronics) , quantum mechanics , gene
The recombination current in polycrystalline silicon on glass solar cells can be modeled by the superposition of two processes, one which involves only shallow electronic levels and another which occurs via deep levels at charged extended defects. The former process is most likely linked to clean dislocations, whereas the latter may originate either from charged dislocations or grain boundaries. The consideration of both kinds of processes is necessary for an accurate description of the device behaviors of poly‐Si on glass solar cells over a wide range of dopant densities. The effects of varying the impurity and dislocation densities are also briefly discussed. Copyright © 2011 John Wiley & Sons, Ltd.