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19%‐efficient and 43 µm‐thick crystalline Si solar cell from layer transfer using porous silicon
Author(s) -
Petermann Jan Hendrik,
Zielke Dimitri,
Schmidt Jan,
Haase Felix,
Rojas Enrique Garralaga,
Brendel Rolf
Publication year - 2012
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.1129
Subject(s) - passivation , materials science , wafer , solar cell , optoelectronics , silicon , layer (electronics) , porous silicon , crystalline silicon , short circuit , monocrystalline silicon , open circuit voltage , current density , energy conversion efficiency , nanotechnology , voltage , electrical engineering , engineering , physics , quantum mechanics
We present a both‐sides‐contacted thin‐film crystalline silicon (c‐Si) solar cell with a confirmed AM1.5 efficiency of 19.1% using the porous silicon layer transfer process. The aperture area of the cell is 3.98 cm 2 . This is the highest efficiency ever reported for transferred Si cells. The efficiency improvement over the prior state of the art (16.9%) is achieved by implementing recent developments for Si wafer cells such as surface passivation with aluminum oxide and laser ablation for contacting. The cell has a short‐circuit current density of 37.8 mA cm −2 , an open‐circuit voltage of 650 mV, and a fill factor of 77.6%. Copyright © 2011 John Wiley & Sons, Ltd.