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Laser‐fired contact optimization in c‐Si solar cells
Author(s) -
Ortega P.,
Orpella A.,
Martín I.,
Colina M.,
López G.,
Voz C.,
Sánchez M. I.,
Molpeceres C.,
Alcubilla R.
Publication year - 2012
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.1115
Subject(s) - materials science , passivation , laser , amorphous silicon , silicon , carbide , nitride , silicon nitride , optoelectronics , silicon carbide , contact resistance , aluminium , amorphous solid , oxide , solar cell , fabrication , metallurgy , crystalline silicon , optics , nanotechnology , layer (electronics) , chemistry , crystallography , physics , medicine , alternative medicine , pathology
In this work we study the optimization of laser‐fired contact (LFC) processing parameters, namely laser power and number of pulses, based on the electrical resistance measurement of an aluminum single LFC point. LFC process has been made through four passivation layers that are typically used in c‐Si and mc‐Si solar cell fabrication: thermally grown silicon oxide (SiO 2 ), deposited phosphorus‐doped amorphous silicon carbide (a‐SiC x /H( n )), aluminum oxide (Al 2 O 3 ) and silicon nitride (SiN x /H) films. Values for the LFC resistance normalized by the laser spot area in the range of 0.65–3 mΩ cm 2 have been obtained. Copyright © 2011 John Wiley & Sons, Ltd.