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A simulation study towards a new concept for realization of thin film triple junction solar cells based on group IV elements
Author(s) -
Feser C.,
Lacombe J.,
v. Maydell K.,
Agert C.
Publication year - 2012
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.1114
Subject(s) - triple junction , photocurrent , solar cell , optoelectronics , band gap , materials science , realization (probability) , theory of solar cells , reflector (photography) , solar cell efficiency , thin film , computer science , nanotechnology , optics , physics , mathematics , light source , statistics
In this paper, the theoretical efficiency of multi‐junction solar cells based on group IV elements has been investigated. The effects of different absorbing layer numbers, different band gap combinations, and temperature changes have been reviewed for multi‐spectral solar cells. Several simulations were done to identify the ideal band gap combination for triple‐junction solar cells. Based on these results and under consideration of actual material parameters, a new promising triple‐junction solar cell concept with a‐Si:H/µc‐Si:H/ and µc‐Ge:H has been found for developing high efficiency thin film solar cells. Additionally, advanced simulations were performed in order to evaluate the feasibility of this new concept. The photocurrent, the external quantum efficiency, and the layer thicknesses were simulated and evaluated. All parameters deliver promising results for a new triple‐junction solar cell concept with an intermediate reflector between the middle‐ and bottom structure. Copyright © 2011 John Wiley & Sons, Ltd.