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Progress of Thin‐Film Silicon Photovoltaic Technologies in SANYO
Author(s) -
Aya Y.,
Shinohara W.,
Matsumoto M.,
Murata K.,
Kunii T.,
Nakagawa M.,
Terakawa A.,
Tanaka M.
Publication year - 2012
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.1111
Subject(s) - amorphous silicon , silicon , materials science , photovoltaic system , solar cell , energy conversion efficiency , reliability (semiconductor) , plasma enhanced chemical vapor deposition , microcrystalline , plasma , optoelectronics , engineering physics , analytical chemistry (journal) , crystalline silicon , electrical engineering , chemistry , physics , engineering , crystallography , power (physics) , chromatography , quantum mechanics
Methods to achieve a good balance among a high conversion efficiency, a large panel size and a high deposition rate of µc‐Si:H for mass production are shown here. For this purpose, an original technology called the Localized Plasma Confinement CVD (LPC‐CVD) method is investigated. Using know‐how from this method, an amorphous silicon/microcrystalline silicon (µc‐Si:H) solar panel, whose size is Gen. 5.5 (1100 mm × 1400 mm) and whose µc‐Si:H deposition rate is 2.4 nm/s, with a conversion efficiency of 11.1% ( V oc = 161.7 V, I sc = 1.46 A, FF = 72.4%, P max = 171 W) is obtained. It is also experimentally confirmed that the value is equivalent to 10.0% of stabilized efficiency. Various reliability tests that conform to IEC standards have been performed for solar modules. It has been shown that the solar modules adapt to the major categories of IEC standards. Copyright © 2011 John Wiley & Sons, Ltd.