Studies of implanted boron emitters for solar cell applications | Zendy

Pawlak B. J. | Zendy; Janssens T. | Zendy; Singh S. | Zendy; KuzmaFilipek I. | Zendy; Robbelein J. | Zendy; Posthuma N. E. | Zendy; Poortmans J. | Zendy; Cristiano F. | Zendy; Bazizi E. M. | Zendy

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Studies of implanted boron emitters for solar cell applications

Author(s) -

Pawlak B. J.,

Janssens T.,

Singh S.,

KuzmaFilipek I.,

Robbelein J.,

Posthuma N. E.,

Poortmans J.,

Cristiano F.,

Bazizi E. M.

Publication year - 2012

Publication title -

progress in photovoltaics: research and applications

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.286

H-Index - 131

eISSN - 1099-159X

pISSN - 1062-7995

DOI - 10.1002/pip.1106

Subject(s) - wafer , boron , materials science , degradation (telecommunications) , solar cell , carrier lifetime , optoelectronics , silicon , analytical chemistry (journal) , chemistry , electrical engineering , organic chemistry , chromatography , engineering

B implanted emitters are investigated in the back junction cell configuration and their material properties are tested in double side implanted Si wafers. B has been implanted at 5 keV at various dose conditions varying from 1 × 10 14 up to 3 × 10 15 at./cm 2 and activated at 1000°C for 10 min. N‐type 8 × 8 cm 2 mono‐crystalline cells are fabricated and measured. Both fill factor and efficiency increase for high‐B doses. However, at 10 15 at./cm 2 B dose the V oc drops, which is in agreement with lifetime degradation in the wafer. Defect evolution simulations of B n I m clusters formation is correlated with lifetime degradation. Copyright © 2011 John Wiley & Sons, Ltd.

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