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Studies of implanted boron emitters for solar cell applications
Author(s) -
Pawlak B. J.,
Janssens T.,
Singh S.,
KuzmaFilipek I.,
Robbelein J.,
Posthuma N. E.,
Poortmans J.,
Cristiano F.,
Bazizi E. M.
Publication year - 2012
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.1106
Subject(s) - wafer , boron , materials science , degradation (telecommunications) , solar cell , carrier lifetime , optoelectronics , silicon , analytical chemistry (journal) , chemistry , electrical engineering , organic chemistry , chromatography , engineering
B implanted emitters are investigated in the back junction cell configuration and their material properties are tested in double side implanted Si wafers. B has been implanted at 5 keV at various dose conditions varying from 1 × 10 14 up to 3 × 10 15 at./cm 2 and activated at 1000°C for 10 min. N‐type 8 × 8 cm 2 mono‐crystalline cells are fabricated and measured. Both fill factor and efficiency increase for high‐B doses. However, at 10 15 at./cm 2 B dose the V oc drops, which is in agreement with lifetime degradation in the wafer. Defect evolution simulations of B n I m clusters formation is correlated with lifetime degradation. Copyright © 2011 John Wiley & Sons, Ltd.