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Gettering in multicrystalline silicon wafers with screen‐printed emitters
Author(s) -
Pletzer T.M.,
Stegemann E.F.R.,
Windgassen H.,
Suckow S.,
Bätzner D.L.,
Kurz H.
Publication year - 2011
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.1099
Subject(s) - getter , wafer , materials science , optoelectronics , dopant , carrier lifetime , silicon , solar cell , doping
ABSTRACT In this paper, the gettering potential of phosphorus dopant pastes used in single‐sided screen‐printing processes is investigated including the consequences for essential solar cell parameters. These results are supported by minority carrier lifetime measurements with the quasi‐steady‐state photoconductance method and certified by the analysis of the recombination current density in solar cells on mc‐Si wafers. Copyright © 2011 John Wiley & Sons, Ltd.