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Electron‐beam crystallized large grained silicon solar cell on glass substrate
Author(s) -
Amkreutz D.,
Müller J.,
Schmidt M.,
Hänel T.,
Schulze T. F.
Publication year - 2011
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.1098
Subject(s) - materials science , nanocrystalline silicon , silicon , amorphous silicon , substrate (aquarium) , layer (electronics) , optoelectronics , crystallization , amorphous solid , chemical vapor deposition , solar cell , electron beam physical vapor deposition , common emitter , nanocrystalline material , crystalline silicon , nanotechnology , chemical engineering , crystallography , chemistry , oceanography , engineering , geology
Thin film hetero‐emitter solar cells with large‐grained poly‐silicon absorbers of around 10 µm thickness have been prepared on glass. The basis of the cell concept is electron‐beam‐crystallization of an amorphous or nanocrystalline silicon layer deposited onto a SiC:B layer. The SiC:B layer covers a commercially well available glass substrate, serving as diffusion barrier, contact layer and dopand source. For silicon absorber deposition a low pressure chemical vapour deposition was used. The successively applied e‐beam crystallization process creates poly‐silicon layers with grain sizes up to 1 × 10 mm 2 with low defect densities. The high electronic quality of the absorber is reflected in open circuit voltages as high as 545 mV, which are realized making use of the well‐developed a‐Si:H hetero‐emitter technology. Copyright © 2011 John Wiley & Sons, Ltd.