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Analysis of degradation mechanisms of crystalline silicon PV modules after 12 years of operation in Southern Europe
Author(s) -
SánchezFriera Paula,
Piliougine Michel,
Peláez Javier,
Carretero Jesús,
Sidrach de Cardona Mariano
Publication year - 2011
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.1083
Subject(s) - crystalline silicon , degradation (telecommunications) , photovoltaic system , anti reflective coating , reliability (semiconductor) , materials science , silicon , delamination (geology) , thermography , solar cell , coating , environmental science , computer science , forensic engineering , electrical engineering , infrared , composite material , optoelectronics , power (physics) , telecommunications , geology , optics , engineering , paleontology , physics , subduction , quantum mechanics , tectonics
The long‐term reliability of photovoltaic modules is crucial to ensure the technical and economic viability of PV as a successful energy source. The analysis of degradation mechanisms of PV modules is key to ensure current lifetimes exceeding 25 years. This paper presents the results of the investigations carried out on the degradation mechanisms of a crystalline silicon PV installation of 2 kWp after 12 years of exposure in Málaga, Spain. The analysis was conducted by visual inspection, infrared thermography and electrical performance evaluation. By visual inspection, the most relevant defects in the modules were identified and ranked according to their frequency. The electrical performance was assessed by comparing the characteristic parameters of the individual modules, obtained by outdoor measurements at the start and end of the exposure period. The correlation of the visual defects and the shifts in the electrical parameters was analysed. The results presented show that glass weathering, delamination at the cell‐EVA interface and oxidation of the antireflective coating and the cell metallization grid were the most frequently occurring defects found. The total peak power loss, including the initial light induced degradation, was 11.5%, which corresponded almost totally to a loss in short‐circuit current. Copyright © 2011 John Wiley & Sons, Ltd.