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High efficiency low temperature grown Cu(In,Ga)Se 2 thin film solar cells on flexible substrates using NaF precursor layers
Author(s) -
Caballero Raquel,
Kaufmann Christian A.,
Eisenbarth Tobias,
Unold Thomas,
Klenk Reiner,
Schock HansWerner
Publication year - 2011
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.1064
Subject(s) - thin film solar cell , thin film , materials science , evaporation , foil method , layer (electronics) , solar cell , deposition (geology) , polyimide , chemical engineering , analytical chemistry (journal) , optoelectronics , nanotechnology , chemistry , composite material , organic chemistry , physics , biology , engineering , thermodynamics , paleontology , sediment
We report a total‐area efficiency of 15.9% for flexible Cu(In,Ga)Se 2 thin film solar cells on polyimide foil (cell area 0.95 cm 2 ). The absorber layer was grown by a multi‐stage deposition process at a maximum nominal process temperature of 420°C. The Na was added via evaporation of a NaF layer prior to the absorber deposition leading to an enhanced V oc and FF. Growth conditions and device characterization are described. Copyright © 2011 John Wiley & Sons, Ltd.