High efficiency low temperature grown Cu(In,Ga)Se 2  thin film solar cells on flexible substrates using NaF precursor layers | Zendy

Caballero Raquel | Zendy; Kaufmann Christian A. | Zendy; Eisenbarth Tobias | Zendy; Unold Thomas | Zendy; Klenk Reiner | Zendy; Schock HansWerner | Zendy

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High efficiency low temperature grown Cu(In,Ga)Se 2 thin film solar cells on flexible substrates using NaF precursor layers

Author(s) -

Caballero Raquel,

Kaufmann Christian A.,

Eisenbarth Tobias,

Unold Thomas,

Klenk Reiner,

Schock HansWerner

Publication year - 2011

Publication title -

progress in photovoltaics: research and applications

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.286

H-Index - 131

eISSN - 1099-159X

pISSN - 1062-7995

DOI - 10.1002/pip.1064

Subject(s) - thin film solar cell , thin film , materials science , evaporation , foil method , layer (electronics) , solar cell , deposition (geology) , polyimide , chemical engineering , analytical chemistry (journal) , optoelectronics , nanotechnology , chemistry , composite material , organic chemistry , physics , biology , engineering , thermodynamics , paleontology , sediment

We report a total‐area efficiency of 15.9% for flexible Cu(In,Ga)Se 2 thin film solar cells on polyimide foil (cell area 0.95 cm 2 ). The absorber layer was grown by a multi‐stage deposition process at a maximum nominal process temperature of 420°C. The Na was added via evaporation of a NaF layer prior to the absorber deposition leading to an enhanced V oc and FF. Growth conditions and device characterization are described. Copyright © 2011 John Wiley & Sons, Ltd.

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