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Performance comparison of AlGaAs, GaAs and InGaP tunnel junctions for concentrated multijunction solar cells
Author(s) -
Wheeldon Jeffrey F.,
Valdivia Christopher E.,
Walker Alexandre W.,
Kolhatkar Gitanjali,
Jaouad Abdelatif,
Turala Artur,
Riel Bruno,
Masson Denis,
Puetz Norbert,
Fafard Simon,
Arès Richard,
Aimez Vincent,
Hall Trevor J.,
Hinzer Karin
Publication year - 2011
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.1056
Subject(s) - suns in alchemy , optoelectronics , doping , gallium arsenide , materials science , quantum tunnelling , solar cell , tunnel junction , equivalent series resistance , voltage , electrical engineering , engineering
Four tunnel junction (TJ) designs for multijunction (MJ) solar cells under high concentration are studied to determine the peak tunnelling current and resistance change as a function of the doping concentration. These four TJ designs are: AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs. Time‐dependent and time‐average methods are used to experimentally characterize the entire current–voltage profile of TJ mesa structures. Experimentally calibrated numerical models are used to determine the minimum doping concentration required for each TJ design to operate within a MJ solar cell up to 2000‐suns concentration. The AlGaAs/GaAs TJ design is found to require the least doping concentration to reach a resistance of <10 −4 Ω cm 2 followed by the GaAs/GaAs TJ and finally the AlGaAs/AlGaAs TJ. The AlGaAs/InGaP TJ is only able to obtain resistances of ≥5 × 10 −4 Ω cm 2 within the range of doping concentrations studied. Copyright © 2010 John Wiley & Sons, Ltd.