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Transport properties of p‐type compensated silicon at room temperature
Author(s) -
Rougieux F.E.,
Macdonald D.,
Cuevas A.
Publication year - 2011
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.1036
Subject(s) - dopant , silicon , electron mobility , compensation (psychology) , materials science , carrier lifetime , optoelectronics , charge carrier density , electrical resistivity and conductivity , ingot , carrier scattering , scattering , engineering physics , electronic engineering , doping , electrical engineering , optics , engineering , physics , composite material , psychology , alloy , psychoanalysis
Deliberate dopant compensation has proven to be an effective way to control ingot resistivity, although the impact of compensation on carrier recombination and mobilities remains under investigation. This paper summarizes recent findings regarding the carrier transport properties of compensated silicon. The capacity of common mobility models to describe compensated silicon is reviewed and compared to experimental data. The observed reduction of both majority and minority carrier mobility due to dopant compensation is described in terms of the underlying scattering mechanisms. The related problem of conversion between resistivity and dopant density in compensated silicon is discussed, and published values of the Hall Factor in compensated silicon are reviewed. Copyright © 2010 John Wiley & Sons, Ltd.