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UV‐nano‐imprint lithography technique for the replication of back reflectors for n‐i‐p thin film silicon solar cells
Author(s) -
Söderström K.,
Escarré J.,
Cubero O.,
Haug F.J.,
Perregaux S.,
Ballif C.
Publication year - 2011
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.1003
Subject(s) - materials science , amorphous silicon , silicon , photocurrent , optoelectronics , substrate (aquarium) , amorphous solid , thin film , solar cell , lithography , nanotechnology , replication (statistics) , quantum dot solar cell , crystalline silicon , monocrystalline silicon , chemistry , crystallography , oceanography , statistics , mathematics , geology
Texturing of interfaces in thin film silicon solar cells is essential to enhance the produced photocurrent and thus the efficiencies. A UV nano‐imprint‐lithography (UV‐NIL) replication process was developed to prepare substrates with textures that are suitable for the growth of n‐i‐p thin film silicon solar cells. Morphological and optical analyses were performed to assess the quality of the replicas. A comparison of single junction amorphous solar cells on the original structures and on their replicas on glass revealed good light trapping and excellent electrical properties on the replicated structures. A tandem amorphous silicon/amorphous silicon (a‐Si/a‐Si) cell deposited on a replica on plastic exhibits a stabilized efficiency of 8.1% and a high yield of 90% of good cells in laboratory conditions. It demonstrates the possibility to obtain appropriate structure on low cost plastic substrate. Copyright © 2010 John Wiley & Sons, Ltd.