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γ‐Butyrolactone‐processable high‐modulus poly(ester imide)s
Author(s) -
Hasegawa Masatoshi,
Tanaka Yuma,
Tominaga Azumi
Publication year - 2012
Publication title -
polymer international
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.592
H-Index - 105
eISSN - 1097-0126
pISSN - 0959-8103
DOI - 10.1002/pi.3199
Subject(s) - materials science , polymer chemistry , thermal stability , copolymer , imide , glass transition , polymer , chemical engineering , composite material , engineering
γ‐Butyrolactone (GBL)‐processable high modulus heat‐resistant materials were developed in this work. The polyaddition of an ester‐containing tetracarboxylic dianhydride, i.e. hydroquinone bis(trimellitate anhydride) (TAHQ), and 2,2′‐bis(trifluoromethyl)benzidine (TFMB) in GBL resulted in gelation in the initial reaction stage. The incorporation of a methyl group to TAHQ (M‐TAHQ) allowed polymerization with TFMB in GBL and led to a homogeneous poly(ester imide) (PEsI) precursor solution with a short pot life of 3 days, whereas a simple copolymerization approach using bulky/flexible comonomers to TAHQ/TFMB was less effective. PEsI precursors (PEsAAs) were prepared from TFMB, M‐TAHQ and a minor fraction of 4,4′‐(hexafluoroisopropylidene)diphthalic anhydride (6FDA) or a fluorene‐containing tetracarboxylic dianhydride. These PEsAA systems showed drastically improved GBL solution stability. In particular, the M‐TAHQ(80);6FDA(20)/TFMB copolymer system provided a PEsAA film with a very high light transmittance at 365 nm (>70%). A photosensitive film composed of this matrix resin and diazonaphthoquinone provided a clear positive‐tone pattern by development in a 2.38 wt% tetramethylammonium hydroxide aqueous solution at room temperature with a high dissolution contrast. The thermally cured PEsI film achieved a very high tensile modulus (>5 GPa) as the present target with other desirable properties, i.e. sufficient film flexibility, a relatively low coefficient of thermal expansion, a high T g and low water absorption. The present materials can be promising candidates as novel buffer coat films in semiconductor applications. Copyright © 2011 Society of Chemical Industry