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High Resolution Lithography Systems: A Review of the Current Status
Author(s) -
Broers Alec N.
Publication year - 1978
Publication title -
physikalische blätter
Language(s) - English
Resource type - Journals
eISSN - 1521-3722
pISSN - 0031-9279
DOI - 10.1002/phbl.19780341222
Subject(s) - lithography , extreme ultraviolet lithography , nanotechnology , fabrication , next generation lithography , ultraviolet radiation , photolithography , integrated circuit , ultraviolet , semiconductor , materials science , optoelectronics , computer science , electron beam lithography , engineering physics , resist , physics , chemistry , pathology , medicine , alternative medicine , layer (electronics) , radiochemistry
This paper discusses the advantages and disadvantages of advanced lithography techniques under investigation for the fabrication of semiconductor integrated circuits. These techniques are replacing conventional ultraviolet (UV) contact/proximity printing. They employ standard UV radiation (λ = 3500 Å—4000 Å), deep UV radiation (λ = 2000 Å—2600 Å), soft x‐rays (λ = 4 Å—40 Å), and electrons. It is assumed that the reader is familiar with the basic principles of the new methods.