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Crosslinking in halogen containing novolac electron beam negative resists
Author(s) -
Lampe I. V.,
Reinhardt M.
Publication year - 1995
Publication title -
polymer engineering and science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.503
H-Index - 111
eISSN - 1548-2634
pISSN - 0032-3888
DOI - 10.1002/pen.760350210
Subject(s) - resist , melamine , materials science , halide , halogen , irradiation , polymer chemistry , aryl , electron beam processing , photochemistry , composite material , organic chemistry , chemistry , alkyl , physics , layer (electronics) , nuclear physics
Halogenophenol novolac (HPN)‐based negative resists exhibit excellent sensitivity and pattern resolution properties. The HPNs act as synergists for crosslinking with other irradiation labile compounds such as naphthoquinone diazide and bisazide vs. hydrogen halide (HX) elimination reaction, resulting in additional crosslinking, probably by aryl radical recombination and/or addition. We describe a new resist formulation based on HPN binder and melamine crosslinker (Cymel 303). In this case the irradiation induced HX elimination additionally catalyzes the melamine crosslinking.