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t‐BOC blocked hydroxyphenyl‐methacrylates: On the way to quarter micron deep‐UV lithography
Author(s) -
Przybilla Klausjürgen,
Dammel Ralph,
Pawlowski Georg,
Röschert Horst,
Spiess Walter
Publication year - 1992
Publication title -
polymer engineering and science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.503
H-Index - 111
eISSN - 1548-2634
pISSN - 0032-3888
DOI - 10.1002/pen.760322013
Subject(s) - photoresist , lithography , photosensitivity , materials science , methacrylate , polymer , bisphenol a , salt (chemistry) , nanotechnology , polymer chemistry , combinatorial chemistry , chemical engineering , optoelectronics , organic chemistry , chemistry , polymerization , composite material , engineering , layer (electronics) , epoxy
t‐Butyloxycarbonyl (t‐BOC) blocked compounds based on the protection of phenolic groups, e.g. poly‐4‐hydroxystyrene derivatives, Bisphenol A type dissolution inhibitors, or onium salt photoacid generators, have found widespread research interest for photoresist systems with excellent photosensitivity and high resolution power. We have made an extension of this approach using new phenol type polymers. This contribution presents first details on the chemistry of these systems and results of their lithographic evaluation as positive tone photoresists for deep UV applications.