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Relationship between electron sensitivity and chemical structures of polymers as electron beam resist. VII: Electron sensitivity of vinyl polymers containing pendant 1,3‐dioxolan groups
Author(s) -
Oguchi Kiyoshi,
Sanui Kohei,
Ogata Naoya,
Takahashi Yoichi,
Nakada Tomihiro
Publication year - 1990
Publication title -
polymer engineering and science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.503
H-Index - 111
eISSN - 1548-2634
pISSN - 0032-3888
DOI - 10.1002/pen.760300804
Subject(s) - polymer , materials science , copolymer , resist , polymer chemistry , acetal , styrene , side chain , methyl methacrylate , acrylate , etching (microfabrication) , methacrylate , organic chemistry , chemistry , nanotechnology , composite material , layer (electronics)
Vinyl polymers containing pendant acetal groups were synthesized using (2,2‐dimethyl‐l,3‐dioxolan‐4‐yl)methyl acrylate (DMA) and (2,2‐dimethyl‐l,3‐dioxo‐lan‐4‐yl)methyl methacrylate (DMM), and were evaluated as negative electron beam (EB) resists. It was found that the EB sensitivity of polymers containing acetal groups in the side chain was higher than that of polymers containing acetal groups in the main chain. A high sensitivity of 3.6 × 10 −8 C/cm 2 was observed. Copolymers of DMA or DMM with styrene were also synthesized in order to improve the durability for dry etching process. It was found that the copolymers had an excellent dry etching durability and were adaptable to EB lithography.