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Laser annealing of polyetheretherketone (PEEK)
Author(s) -
Fang ShwuJen,
Salovey R.,
Allen Susan D.
Publication year - 1989
Publication title -
polymer engineering and science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.503
H-Index - 111
eISSN - 1548-2634
pISSN - 0032-3888
DOI - 10.1002/pen.760291806
Subject(s) - peek , materials science , amorphous solid , annealing (glass) , laser , recrystallization (geology) , irradiation , composite material , laser power scaling , fluence , optics , polymer , crystallography , nuclear physics , biology , paleontology , chemistry , physics
Abstract Changes in the crystalline morphology and thermal behavior of amorphous poly(etheretherketone) (PEEK) films have been effected by irradiation with a continuous wave CO 2 laser. At high laser scan rate and power, PEEK films melt and requench into amorphous transparent films. At a scanning velocity of 14 μm/s and incident intensities ≥ 4.8 W/cm 2 and a Gaussian beam radius of 1.63 mm, PEEK films crystallize “completely” above T g on laser annealing. Irradiation of PEEK films on a quartz substrate reduces the cooling rate, allowing slower and more perfect recrystallization. Similar changes are effected by reducing the laser scan velocity or by increasing the laser power. Depending on the experimental conditions, laser induced recrystallization may occur on annealing above T g or on cooling from the melt.