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Polysilanes: Photochemistry and deep UV lithography
Author(s) -
Miller R. D.,
Wallraff G.,
Clecak N.,
Sooriyakumaran R.,
Michl J.,
Karatsu T.,
McKinley A. J.,
Klingensmith K. A.,
Downing J.
Publication year - 1989
Publication title -
polymer engineering and science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.503
H-Index - 111
eISSN - 1548-2634
pISSN - 0032-3888
DOI - 10.1002/pen.760291311
Subject(s) - stepper , materials science , excimer laser , polysilane , excimer , lithography , laser , photochemistry , photolithography , copolymer , optoelectronics , optics , nanotechnology , polymer , composite material , chemistry , physics
The photochemistry of poly(cyclohexylmethylsilane) (PCHMS) has been studied, and PCHMS homopolymer has been shown to be useful for high resolution, deep UV pattern generation either by using a commercial 1:1 projection printer operating in the deep UV or by an excimer laser stepper at 248 nm. In the case of the excimer laser stepper, images 0.5 μm and smaller have been printed, which represents an improvement over the 0.8 μm limit previously reported for polysilane copolymers.