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A novel positive resist for deep UV lithography
Author(s) -
Yamaoka Tsuguo,
Nishiki Masashi,
Koseki Ken'Ichi,
Koshiba Mitsunobu
Publication year - 1989
Publication title -
polymer engineering and science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.503
H-Index - 111
eISSN - 1548-2634
pISSN - 0032-3888
DOI - 10.1002/pen.760291305
Subject(s) - photoresist , resist , materials science , lithography , styrene , polymer , sulfonate , nitro , copolymer , polymer chemistry , nanotechnology , optoelectronics , chemistry , organic chemistry , composite material , alkyl , sodium , layer (electronics) , metallurgy
A novel positive resist was prepared by sensitizing poly(p‐trimethylsilyloxystyrene) with p‐nitro‐benzyl‐9, 10‐diethoxyanthracene‐2‐sulfonate (NBAS) which was found to be a deep UV bleachable acid precursor. The silylated polymer is converted to alkaline soluble poly(p‐hydroxy‐styrene) in the presence of acid and a small amount of water. The photoresist gives high resolution positive patterns on imagewise exposure with deep UV light with a sensitivity of 15 mJ/cm 2 .