A novel positive resist for deep UV lithography | Zendy

Yamaoka Tsuguo | Zendy; Nishiki Masashi | Zendy; Koseki Ken'Ichi | Zendy; Koshiba Mitsunobu | Zendy

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A novel positive resist for deep UV lithography

Author(s) -

Yamaoka Tsuguo,

Nishiki Masashi,

Koseki Ken'Ichi,

Koshiba Mitsunobu

Publication year - 1989

Publication title -

polymer engineering and science

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.503

H-Index - 111

eISSN - 1548-2634

pISSN - 0032-3888

DOI - 10.1002/pen.760291305

Subject(s) - photoresist , resist , materials science , lithography , styrene , polymer , sulfonate , nitro , copolymer , polymer chemistry , nanotechnology , optoelectronics , chemistry , organic chemistry , composite material , alkyl , sodium , layer (electronics) , metallurgy

A novel positive resist was prepared by sensitizing poly(p‐trimethylsilyloxystyrene) with p‐nitro‐benzyl‐9, 10‐diethoxyanthracene‐2‐sulfonate (NBAS) which was found to be a deep UV bleachable acid precursor. The silylated polymer is converted to alkaline soluble poly(p‐hydroxy‐styrene) in the presence of acid and a small amount of water. The photoresist gives high resolution positive patterns on imagewise exposure with deep UV light with a sensitivity of 15 mJ/cm 2 .

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