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Relationship between electron sensitivity and chemical structures of polymers as electron beam (EB) resists. V: Polyamides containing sulfur groups as positive eb resists
Author(s) -
Oguchi Kiyoshi,
Ygneyama Sachiko,
Sanul Kohei,
Ogata Naoya,
Takahashi Yoichi,
Nakada Tomihiro
Publication year - 1988
Publication title -
polymer engineering and science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.503
H-Index - 111
eISSN - 1548-2634
pISSN - 0032-3888
DOI - 10.1002/pen.760280106
Subject(s) - resist , materials science , polymer , cathode ray , decomposition , photoresist , polymer chemistry , electron beam processing , electron , sulfur , polyamide , electron beam lithography , nanotechnology , composite material , chemistry , organic chemistry , physics , layer (electronics) , quantum mechanics , metallurgy
Polyamidethioethers were synthesized and evaluated as positive electron beam (EB) resists, The polyamidethioethers decomposed easily with EB exposure. At high doses (indicating low sensitivity), crosslinking reactions occurred for polyamidethioethers having C‐S bonds produced by Michael addition, but the other polyamidethioethers did not crosslink. The C‐S bonds produced by Michael addition may influence crosslinking rather than decomposition. The sensitivity of oxidized polyamidethioether was higher than that of the nonoxidized polymer with no change in resolution. The oxidized polyamidethioether had a high sensitivity and a high resolution, and is adaptable as a positive EB resist.