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The reduction of reflective notches using “dyed” resist
Author(s) -
Watts Michael P. C.,
Debruin David,
Arnold William H.
Publication year - 1986
Publication title -
polymer engineering and science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.503
H-Index - 111
eISSN - 1548-2634
pISSN - 0032-3888
DOI - 10.1002/pen.760261618
Subject(s) - resist , notching , materials science , lithography , optics , reduction (mathematics) , line width , substrate (aquarium) , molar absorptivity , optoelectronics , line (geometry) , nanotechnology , physics , geometry , layer (electronics) , oceanography , mathematics , geology , metallurgy
Variation in line width caused by light scattered from the substrate (reflective notching) is a major problem in VLSI lithography. This paper demonstrates the reduction of reflective notches using a resist with increased absorptivity (a dyed resist). The optimal set of process conditions which minimize line width variations is explored.