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Optimal developer selection for negative acting resists
Author(s) -
Novembre A. E.,
Masakowski L. M.,
Hartney M. A.
Publication year - 1986
Publication title -
polymer engineering and science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.503
H-Index - 111
eISSN - 1548-2634
pISSN - 0032-3888
DOI - 10.1002/pen.760261617
Subject(s) - resist , materials science , compatibility (geochemistry) , solubility , swelling , dissolution , hildebrand solubility parameter , lithography , nanotechnology , computer science , polymer , composite material , chemical engineering , organic chemistry , chemistry , engineering , optoelectronics , layer (electronics)
A methodology for determining the optimal single component developer/rinse pair for a negative acting resist is described. This method is applicable to any resist basing its negative action on crosslinking and development in organic based solvents. Within the method, initial developer/rinse candidates are identified by utilizing the Hansen 3‐dimensional solubility parameter model. This model provides a thermodynamic solubility picture of the resist, and determines those developers which will only minimally contribute towards swelling of defined features. Developer/rinse pairs are subsequently evaluated for acceptable resist dissolution kinetics, and compatibility with existing spray development processes. The optimum developer/rinse pair will only minimally effect changes in temperature which result in a minimum sensitivity to relative humidity variations. The use of this method is illustrated by choosing an optimal developer/rinse system for a chlorine containing, styrene based negative acting resist. The overall electron beam lithographic performance of this resist is shown to be improved with respect to a previously used 2‐component ketone based developer.