Premium
Synchrotron lithography: The way to sub‐micron features with single layer resists
Author(s) -
Huber H.L.,
Betz H.,
Heuberger A.
Publication year - 1986
Publication title -
polymer engineering and science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.503
H-Index - 111
eISSN - 1548-2634
pISSN - 0032-3888
DOI - 10.1002/pen.760261616
Subject(s) - resist , synchrotron radiation , materials science , lithography , x ray lithography , optics , synchrotron , photoresist , photolithography , layer (electronics) , optoelectronics , nanotechnology , physics
Abstract Soft X‐ray radiation is affected neither by scattering in the resist nor by reflection from the substrate surface, so that a one‐layer resist system can be maintained even in the sub‐micron range. This holds primarily for the parallel synchrotron radiation avoiding all the geometrical distortions connected with X‐ray tubes and even plasma sources. It has been shown that a minimum feature size of 0.2 μm can be achieved in this case. Different resist systems applicable in X‐ray lithography have been tested regarding resolution, sensitivity, and etch stability. The optical resists Kodak ‘HPR 204’ shows very high process stability, good resolution, but low sensitivity. It is, therefore, suitable for an X‐ray pilot process but not for high throughput production. The high sensitive X‐ray resist TBM 120′ a fluorized poly(methyl methacrylate) which shows originally a very poor etch stability can be stabilized by post exposure with synchrotron radiation.