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Submicron lithography in Japan
Author(s) -
Shibayama Kyoichi,
Kato Tadao
Publication year - 1986
Publication title -
polymer engineering and science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.503
H-Index - 111
eISSN - 1548-2634
pISSN - 0032-3888
DOI - 10.1002/pen.760261612
Subject(s) - stepper , lithography , materials science , resist , next generation lithography , extreme ultraviolet lithography , electron beam lithography , x ray lithography , optoelectronics , photolithography , ion beam lithography , very large scale integration , photomask , nanotechnology , optics , electrical engineering , engineering , physics , layer (electronics)
Abstract 1Mbit D‐RAM. the most advanced VLSI device, is realized by a high performance stepper with the conventional optical techniques. However, as the optical lithography has an inherent limit of resolution, new technologies are being developed rapidly for the development of new generation VLSI devices (4M‐16Mbit D‐RAM) using shorter wavelength photons of i‐line. Electron beam (EB) lithography is already in practical mask making products, but the resolution limit is about 0.5 μm because of proximity effects. In order to make higher resolution and higher precision masks, high voltage EB technique is being developed to minimize the proximity effect, and fabricated 0.25 μm line and space by a single scan at 50kV. X‐ray technology 1; becoming practical after a long laboratory‐level study, using high performance X‐ray resists (CPMS: chlorinated polymetylstylene). Focused Ion Beam (FIB) technology has been anticipated for its capability of submicron lithography due to a reduced proximity effect. High speed submicron Si MOSFET and GaAs MESFET with 0.25 μm gate have been fabricated using FIB technology. Activities of submicron lithography technology in Japan (optical stepper, EB, X‐ray, and FIB) are described.