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Poly(alkenylsilane sulfone)s as positive electron beam resists for two‐layer systems
Author(s) -
Gozdz Antoni S.,
Craighead Harold G.,
Bowdkn Murrak J.
Publication year - 1986
Publication title -
polymer engineering and science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.503
H-Index - 111
eISSN - 1548-2634
pISSN - 0032-3888
DOI - 10.1002/pen.760261609
Subject(s) - copolymer , resist , materials science , layer (electronics) , polymer , polymerization , polymer chemistry , etching (microfabrication) , sulfur , reactive ion etching , sulfone , cathode ray , chemical engineering , photochemistry , electron , composite material , chemistry , physics , quantum mechanics , engineering , metallurgy
Alternating copolymers of sulfur dioxide and vinyltrimethylsilane (VTMS) and terpolymers with allyltrimethylsilane (ATMS) and 1‐butene have been synthesized by low‐temperature, free radical‐initiated polymerization. The co‐polymers with VTMS were soluble but hydrolytically unstable. Whereas the copolymer from ATMS was insoluble, terpolymers containing less than 75 mol‐percent ATMS (relative to butene) were soluble in a variety of organic solvents. Moreover, they were stable against hydrolysis and had good film forming properties. Their electron beam sensitivity was 1.5 °C/cm 2 at 20 keV. and their contrast was ∼2. The terpolymers have been used as a top imaging layer in a two‐layer resist system to transfer half‐micron features into a 1.2μm‐thick Novolac planarizing layer by oxygen reactive ion etching (O 2 , RIE).