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Relaxation induced changes in electrical behavior of glassy chalcogenide semiconductors
Author(s) -
Abkowitz M.
Publication year - 1984
Publication title -
polymer engineering and science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.503
H-Index - 111
eISSN - 1548-2634
pISSN - 0032-3888
DOI - 10.1002/pen.760241412
Subject(s) - chalcogenide , materials science , relaxation (psychology) , condensed matter physics , semiconductor , trapping , chemical physics , band gap , optoelectronics , chemistry , physics , biology , psychology , social psychology , ecology
Effects of structural relaxation and the glass‐transition process are clearly manifested in the electrical behavior of glassy‐chalcogenide films. Analysis of the transport and trapping of photoinjected carriers and of the thermal generation of free carriers in the bulk reveal that in chalcogenides each of these processes is mediated by a specific manifold of localized electronic states residing in the mobility (forbidden) gap. It is demonstrated that in the vicinity of T g the population of these states varies systematically with the structural state of the glassy film always tending toward a temperature‐dependent quasi‐equilibrium. The present‐observations thus clearly establish the structural origin of key electronic‐gap states and simultaneously reveal the mechanism by which relaxation impacts electrical behavior.