High‐temperature electrical conductivity and thermal decomposition of Sylgard® 184 and mixtures containing hollow microspherical fillers | Zendy

Johnson R. T. | Zendy; Biefeld R. M. | Zendy; Sayre J. A. | Zendy

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High‐temperature electrical conductivity and thermal decomposition of Sylgard® 184 and mixtures containing hollow microspherical fillers

Author(s) -

Johnson R. T.,

Biefeld R. M.,

Sayre J. A.

Publication year - 1984

Publication title -

polymer engineering and science

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.503

H-Index - 111

eISSN - 1548-2634

pISSN - 0032-3888

DOI - 10.1002/pen.760240608

Subject(s) - materials science , thermal decomposition , composite material , electrical conductor , thermal stability , electrical resistivity and conductivity , volatilisation , silicone , decomposition , dielectric , thermal conductivity , ceramic , glass microsphere , conductivity , thermal , microsphere , chemical engineering , meteorology , ecology , chemistry , physics , electrical engineering , optoelectronics , organic chemistry , nuclear physics , engineering , biology

The high‐temperature electrical conductivity and thermal decomposition characteristics of Sylgard® 184 with and without hollow microspheres of glass, silica, and ceramic have been determined to 600 to 700°C in air and nitrogen environments. The materials are silicone‐based dielectrics and are used as electronic encapsulants. Results show that a peak in the conductivity temperature dependence at ∼300°C results principally from volatilization of [Si(CH 3 ) 2 O] n with some evolution of water, that oxygen accelerates decomposition, and that the microspheres may help form a network of interconnected conductive pathways in the residual material. There is a good correlation between thermal stability and temperature‐dependent electrical properties.

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