Premium
High‐temperature electrical conductivity and thermal decomposition of Sylgard® 184 and mixtures containing hollow microspherical fillers
Author(s) -
Johnson R. T.,
Biefeld R. M.,
Sayre J. A.
Publication year - 1984
Publication title -
polymer engineering and science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.503
H-Index - 111
eISSN - 1548-2634
pISSN - 0032-3888
DOI - 10.1002/pen.760240608
Subject(s) - materials science , thermal decomposition , composite material , electrical conductor , thermal stability , electrical resistivity and conductivity , volatilisation , silicone , decomposition , dielectric , thermal conductivity , ceramic , glass microsphere , conductivity , thermal , microsphere , chemical engineering , meteorology , ecology , chemistry , physics , electrical engineering , optoelectronics , organic chemistry , nuclear physics , engineering , biology
The high‐temperature electrical conductivity and thermal decomposition characteristics of Sylgard® 184 with and without hollow microspheres of glass, silica, and ceramic have been determined to 600 to 700°C in air and nitrogen environments. The materials are silicone‐based dielectrics and are used as electronic encapsulants. Results show that a peak in the conductivity temperature dependence at ∼300°C results principally from volatilization of [Si(CH 3 ) 2 O] n with some evolution of water, that oxygen accelerates decomposition, and that the microspheres may help form a network of interconnected conductive pathways in the residual material. There is a good correlation between thermal stability and temperature‐dependent electrical properties.