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Evaluation of the influence of process factors on plasma developed X‐ray resist properties
Author(s) -
Taylor G. N.,
Hellman M. Y.,
Feather M. D.,
Willenbrock W. E.
Publication year - 1983
Publication title -
polymer engineering and science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.503
H-Index - 111
eISSN - 1548-2634
pISSN - 0032-3888
DOI - 10.1002/pen.760231811
Subject(s) - materials science , resist , texture (cosmology) , resolution (logic) , monomer , analytical chemistry (journal) , surface finish , gel permeation chromatography , composite material , chromatography , polymer , chemistry , layer (electronics) , image (mathematics) , artificial intelligence , computer science
UV spectroscopy, gel permeation chromatography (GPC) and liquid chromatography (LC) have been used to analyze process factors that influence the properties of PDXR‐2 plasma developed X‐ray resist comprised of 92.5 wt percent poly(2,3‐dichloro‐1‐propyl acrylate) and 7.5 wt percent bis ‐acryloxybutyltetramethyldisiloxane (BABTDS). The GPC‐LC method is particularly useful in optimizing fixing conditions, determining monomer concentration in the film, and studying molecular processes caused by absorbed X‐rays and thermal effects during fixing. Evidence for a synergistic sensitivity enhancement resulting from fixing and exposure is presented. Optimally processed O 2 reactive‐ion etch developed patterns exhibit a microgranular texture in both exposed and unexposed regions of <500 Å size. Unexposed region texture consists of SiO 2 resulting from the BABTDS monomer. It is completely removed by reactive ion etching with CHF 3 for short times at low power. The exposed area texture is not removed and affords an edge roughness per line edge of <500 Å. Resolution appears mask limited while granular size is dependent on exposure time. A 20 sec exposure optimizes resolution, pattern uniformity, and granularity. 0.5 μm line and space resolution can be obtained with the X‐ray machine and masks currently in use.